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In the field of microelectronics, the demand for data storage and fast computing capabilities is a challenge. In order to tackle this, spintronics and nanomagnetism are emerging as alternatives that operate at the nanoscale and offer potential solutions.
This is a magnetic skyrmion
Image credits: Karin Everschor-Sitte
The magnetic skyrmion is a promising candidate for information storage. This particle-like magnetic entity has great potential, especially in an energy-conscious future.
For this, we need to integrate the magnetic skyrmion in magnetic memories. Magnetic tunnel junctions (MTJs) serve as the basic elements for magnetic memories.
This is a magnetic tunnel junction
Figure taken from my thesis manuscript
When an electrical current goes through a magnetic tunnel junction, we can read two different resistance values depending on the relative orientation of the magnetic layers (see Figure b).
In order to switch between both resistance states, we can use either external magnetic fields or larger currents.
Towards a skyrmion based magnetic device
Figures taken from my thesis manuscript
Using X-ray microscopy techniques, during my thesis we demonstrated the readout and write operations of a skyrmion in a MTJ. Those were important steps towards the implementation of skyrmion-based devices. It also opened a promising outlook for the use of skyrmions non-conventional computing devices.
If you would like to read more about this work:
J Urrestarazu et al, Nano Letters (2024)
Other scientific works I have actively participated in can be found here:
Image by Bruno Bourgeois and Olivier Boulle
Fast current-induced skyrmion motion in synthetic antiferromagnets
V. T. P. , J. Urrestarazu et al., Science (2024)
R. Juge, J. Urrestarazu et al., Nature Communications (2022)
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